About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Effects of a stress field on boron ion implantation damage in silicon
Abstract
The effect of stress fields on the nucleation of defects from boron ion implantation into silicon has been examined. Two different processing techniques were used to create the stress field: formation of an oxide-filled trench and formation of windows etched into nitride films. Interstitial dislocation loops created by the boron implantation were found to be preferentially oriented with respect to the stress field. A correlation between the force resulting from the stress field and the orientation of the dislocation loops was found.