Effects of a stress field on boron ion implantation damage in silicon

Abstract

The effect of stress fields on the nucleation of defects from boron ion implantation into silicon has been examined. Two different processing techniques were used to create the stress field: formation of an oxide-filled trench and formation of windows etched into nitride films. Interstitial dislocation loops created by the boron implantation were found to be preferentially oriented with respect to the stress field. A correlation between the force resulting from the stress field and the orientation of the dislocation loops was found.