Applied Physics Letters

Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene

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We show that the surface morphology and electrical properties of graphene grown on SiC(0001) wafers depend strongly on miscut angle, even for nominally "on-axis" wafers. Graphene grown on pit-free surfaces with narrow terraces (miscut above 0.28°) shows substantially lower Hall mobility than graphene on surfaces with miscut angles below 0.1° that have wider terraces with some pits. The effect of pits on mobility is not detrimental if flat, pit-free areas with dimensions larger than the carrier mean free path remain between pits. Using these results, we optimized the growth process, achieving room-temperature mobility up to 3015 cm2 /V s at N=2.0× 10 12 cm-2. © 2011 American Institute of Physics.