Irem Boybat, Manuel Le Gallo, et al.
NVMTS 2017
The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells. © 2009 IEEE.
Irem Boybat, Manuel Le Gallo, et al.
NVMTS 2017
S. R. Nandakumar, Manuel Le Gallo, et al.
Journal of Applied Physics
Irem Boybat, Manuel Le Gallo, et al.
Nature Communications
Irem Boybat, S. R. Nandakumar, et al.
NVMTS 2018