About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Determination of the frequency-dependent resistivity of ultrathin metallic films on Si(111)
Abstract
Inelastic electron scattering is used to determine the frequency-dependent resistivity of ultrathin metallic films on Si(111). The experimental data are analyzed in the single-scattering regime using dipole scattering theory. An unusual frequency dependence of the resistivity is found for low coverages of Pd on Si(111) and analyzed using the Bruggeman effective-medium theory. This analysis together with hydrogen-titration studies indicates the presence of metallic clusters embedded in the surface. We also show that electron tunneling via surface states gives an important contribution to the dc conductivity of these ultrathin granular metal films on Si(111). © 1985 The American Physical Society.