Kaoutar El Maghraoui, Gokul Kandiraju, et al.
WOSP/SIPEW 2010
MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented. ©Copyright 2006 by International Business Machines Corporation.
Kaoutar El Maghraoui, Gokul Kandiraju, et al.
WOSP/SIPEW 2010
B. Wagle
EJOR
Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
Rajeev Gupta, Shourya Roy, et al.
ICAC 2006