Conference paper
Strong and flexible domain typing for dynamic E-business
Yigal Hoffner, Simon Field, et al.
EDOC 2004
MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented. ©Copyright 2006 by International Business Machines Corporation.
Yigal Hoffner, Simon Field, et al.
EDOC 2004
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CLEF 2013
B. Wagle
EJOR
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