Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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14 results for T. Maffitt

A 14 nm embedded STT-MRAM CMOS technology
- - Daniel C. Edelstein
  - M. Rizzolo
  - et al.
- 2020
- IEDM 2020
1.4Gsearch/s 2Mb/mm² TCAM using two-phase-precharge ML sensing and power-grid preconditioning to reduce Ldi/dt power-supply noise by 50%
- - Igor Arsovski
  - Michael Fragano
  - et al.
- 2017
- ISSCC 2017
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- - R. Beach
  - T. Min
  - et al.
- 2008
- IEDM 2008
A Double-Data-Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read-Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications
- - H. Lung
  - C. Miller
  - et al.
- 2016
- IMW 2016
A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing
- - J. DeBrosse
  - T. Maffitt
  - et al.
- 2015
- CICC 2015
1Mb 0.41 μm² 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing
- - Jing Li
  - Robert Montoye
  - et al.
- 2013
- VLSI Circuits 2013
1Mb 0.41 μm² 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing
- - Jing Li
  - Robert Montoye
  - et al.
- 2013
- VLSI Technology 2013
A 512Mb phase-change memory (PCM) in 90nm CMOS achieving 2b/cell
- - Gael F. Close
  - Urs Frey
  - et al.
- 2011
- VLSI Circuits 2011
A novel reconfigurable sensing scheme for variable level storage in phase change memory
- - Jing Li
  - Chao-I Wu
  - et al.
- 2011
- IMW 2011
A 16Mb MRAM featuring bootstrapped write drivers
- - J.K. DeBrosse
  - C. Arndt
  - et al.
- 2004
- VLSI Circuits 2004