Cu CMP edge uniformity improvement studies for 32 nm technology node and beyond

Abstract

Studies of the wafer edge uniformity step by step, from hard mask deposition, reactive ion etch, electroplating to post Cu CMP had been done using scanning electron microscopy (SEM) measurements, showed that the major wafer non-uniformity comes from the Cu CMP step. Improvement of Cu CMP edge uniformity had been achieved through engineering of platen 1 (P1) using real time profile control as well as CMP head zone pressure adjustment and platen 3 (P3) slurry optimizations © 2010 Materials Research Society.