Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
We have used cross-sectional scanning tunneling microscopy and spectroscopy to study a Si (001) p-n junction and a Si/Si0.76Ge0.24 (001) superlattice grown by molecular-beam epitaxy. The shape of the band-edge profile in the p-n junction can be seen with a spatial resolution of better than 100 åA, and features in the electronic structure of the Si/Si0.76Ge0.24 superlattice have been detected with a spatial resolution of only a few nanometers. Topographic contrast between the Si and Si0.76Ge0.24 layers in the superlattice has also been observed. © 1993.
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
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Solid State Communications
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Physical Review B