Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J. Tersoff
Applied Surface Science
Ming L. Yu
Physical Review B
Michiel Sprik
Journal of Physics Condensed Matter