New paradigms for cost-effective III-V photovoltaic technology
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate. © 2012 American Institute of Physics.
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
Pouya Hashemi, Karthik Balakrishnan, et al.
ECSSMEQ 2014
Stephen W. Bedell, Davood Shahrjerdi, et al.
ISSWB 2012
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Advanced Materials