Talia S. Gershon, Byungha Shin, et al.
Advanced Energy Materials
We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9 and 7.2 on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon using plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. The conversion efficiencies of the HJ solar cells are well-comparable with conventional devices fabricated at temperatures as high as 600 °C. We also study the surface passivation of c-Ge with hydrogenated amorphous and microcrystalline Si and correlate the passivation quality with the electrical performance of the HJ solar cells. © 2012 American Institute of Physics.
Talia S. Gershon, Byungha Shin, et al.
Advanced Energy Materials
Guy M. Cohen, Simone Raoux, et al.
MRS Spring Meeting 2011
Zhen Zhang, F. Pagette, et al.
VLSI-TSA 2010
Davood Shahrjerdi, Junghyo Nah, et al.
Applied Physics Letters