Publication
Physical Review Letters
Paper

Calculated energy levels and optical absorption in n-type Si accumulation layers at low temperature

View publication

Abstract

Self-consistent sub-band splittings and inter-sub-band optical matrix elements are calculated for n-type accumulation layers at temperatures low enough that the bulk carriers are frozen out. The energy splittings are sensitive to the concentration of acceptor impurities in the surface space-charge layer. © 1974 The American Physical Society.

Date

14 Oct 1974

Publication

Physical Review Letters

Authors

Share