Electron exchange energy in Si inversion layers

Abstract

The exchange energy is found for electrons in a two-dimensional system and in Si inversion layers which are dynamically two dimensional. We find that exchange lowers the energy of the lowest sub-band in Si inversion layers significantly, but affects the energies of higher sub-bands and the spatial extent of the wave functions in the direction perpendicular to the surface only slightly. © 1973 The American Physical Society.