About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Paper
Anomalous bonding in SiO2at the SiO2-Si interface
Abstract
Ultraviolet photoelectron spectroscopy valence-band spectra measured at 51 eV for a series of thin oxide layers thermally grown on Si(l 11) and Si(100) surfaces show that anomalous bonding configurations exist in SiO2near the interface. A comparison with theoretical density-of-states calculations indicate that these configurations cannot be related to the existence of a strained SiO2layer with a distribution of Si-O Si bond angles different to what is found in bulk SiO2. The results support the existence of threefold-coordinated oxygen centres as described in the valence-alternation-pair model. © 1987 Taylor & Francis Group, LLC.