About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Chemisorption of H2O on Si(100)
Abstract
The chemisorption of H2O on Si(100)-(2×1) has been studied at room temperature using photoelectron spectroscopy and photon-stimulated desorption. Three H2O-induced valence orbitals are found at 6.2, 7.2, and 11.5 eV below the valence-band maximum (which is 0.4 eV below EF). They can be assigned to chemisorbed molecular H2O. The Si 2p level is chemically shifted by -0.9 eV corresponding to a single silicon-oxygen bond. Together with the observed work-function decrease, we suggest that H2O is adsorbed oxygen end down (possibly tilted). © 1983 The American Physical Society.