About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Chemical Reviews
Paper
Advances in patterning materials for 193 nm immersion lithography
Abstract
The advancements in optical lithography tools, processes, and patterning materials which are critical to the continued performance increases of semiconductor devices as well as to the overall economics of the semiconductor industry have been reported. the development of high index immersion lithography, including progress in high refractive index lens materials, high refractive index immersion fluids, and high refractive index photoresists. The minimum resolution such as critical dimension or minimum half-pitch that can be achieved by a lithographic process is described by the Rayleigh equation. The chemists and engineers rely on the accumulated knowledge of the interaction of water with lithographic materials and build upon the available materials and process-based mitigation strategies to design double-exposure materials and double-patterning processes that are compatible with immersion lithography.