Impact of conductance drift on multi-PCM synaptic architectures
Irem Boybat, S. R. Nandakumar, et al.
NVMTS 2018
Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.
Irem Boybat, S. R. Nandakumar, et al.
NVMTS 2018
Manuel Le Gallo, Daniel Krebs, et al.
Advanced Electronic Materials
Thomas Parnell, Andreea Anghel, et al.
NeurIPS 2020
Abu Sebastian, Manuel Le Gallo, et al.
Journal of Applied Physics