IEEE Electron Device Letters

A high-speed, high-sensitivity silicon lateral trench photodetector

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We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, exhibits a 6-dB bandwidth of 1.5 GHz at 3.0 V and an external quantum efficiency of 68% at 845 nm wavelength. A photoreceiver with a wire-bonded lateral trench detector and a BiCMOS trans-impedance amplifier demonstrates excellent operation at 2.5 Gb/s data rate and 845 nm wavelength with only a 3.3 V bias.