A 2-layer resist system derived from trimethylsilylstyrene

Abstract

This paper describes the design and preparation of a negative tone, oxygen etch resistant DUV photoresist. This two-component resist system is composed of an oxygen plasma etch resistant matrix resin, poly(trimethylsilylmethylstyrene), and a monomeric radical generator such as trichlorobenzene or 3, 3’-diazidodiphenylsulfone. © 1986 SPIE.