IEEE Journal of Solid-State Circuits

A 1.0-ns 5-kbit ecl RAM

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A bipolar 512 x 10-bit ECL RAM with an access time of 1.0 ns and a power dissipation of 2.4 W. achieving an access-time power/bit product of 0.48 pJ/bit, has been developed. The RAM was fabricated using an advanced bipolar technology featuring poly-base self-alignment, poly-emitter shallow profile, and silicon-filled trench isolation with a minimum mask dimension of 1.2 µm. A Schottky-clamped multi-emitter cell with a cell size of 760 µm2 is obtained as a result of compact cell layout and the use of 1.2-µm trench isolation. Copyright © 1986 by the Institute of Electrical and Electronics Engineers, Inc.