Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
IEEE Transactions on Electron Devices
This letter discusses the effect of off-axis implant on the characteristics of advanced self-aligned bipolar transistors utilizing a sidewall-spacer technology, Experimental results are presented to show that as a result of offsetting the base profile with respect to the emitter profile due to the sidewall shadowing effect, the 7° off-axis implant causes orientation-dependent perimeter punchthrough at one of the emitter edges and orientation-dependent perimeter tunneling at the other emitter edge. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.
Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
IEEE Transactions on Electron Devices
G.P. Li, Tak H. Ning, et al.
IEEE T-ED
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008
D. Moy, S. Basavaiah, et al.
Solid State Electronics