2T1D memory cell with voltage gain

Abstract

A 2T1D dynamic memory cell with two transistors (T) and a gated diode (D) is presented. The gated diode acts as a nonlinear capacitance which amplifies the internal stored voltage in a read operation, leading to high performance, higher S/N ratio, and low voltage operation. Details about the gated diode structure, its principle of operations, the memory cell circuits and the array structure are presented, followed by hardware results.