Publication
Journal of Applied Physics
Paper

1-μm bubble permalloy "contiguous-disk" devices

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Abstract

Gapless bubble propagation circuits based on a complementary permalloy contiguous-disk structure present an interesting alternative to the ion-implanted bubble devices currently being developed. This new approach combines the attractive lithographic tolerances inherent in the ion-implanted structure with the better established permalloy fabrication techniques. Successful propagation of 1 μm diameter bubbles has been demonstrated over bias field margins greater than 10% in circuits with a cell size of 15 μm2. The stepped structure was formed using an SiO2 lift-off method. The minimum lithographic feature was 1 μm and the operating drive field was approximately 50 Oe. Device tolerance to processing variations in terms of the required spacer thicknesses is shown to be adequate.

Date

01 Dec 1981

Publication

Journal of Applied Physics

Authors

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