Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
- 2022
- IEDM 2022
Nanbo Gong
Overview
Title
Research Staff Member
Location
IBM Research - Yorktown Heights
Yorktown Heights, NY USA
Publications
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85oC and High Endurance 3D Crosspoint Memory
- 2022
- IEDM 2022
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory
- 2021
- IEDM 2021
Patents
Pcm Cell With Resistance Drift Correction
- 23 Jan 2023
- US
- 11563173
Multi-level Cell Threshold Voltage Operation Of One-selector-one-resistor Structure Included In A Crossbar Array
- 16 Jan 2023
- US
- 11557342
Low-voltage Flash Memory Integrated With A Vertical Field Effect Transistor
- 26 Sep 2022
- US
- 11456308
Memory Erasure Using Proximity Heaters
- 05 Sep 2022
- US
- 11437102
Multi-level Ferroelectric Field-effect Transistor Devices
- 29 Aug 2022
- US
- 11430510
Semiconductor Logic Circuits Including A Non-volatile Memory Cell
- 02 May 2022
- US
- 11322202
Ferroelectric Field Effect Transistor With Nanowire Core
- 11 Apr 2022
- US
- 11302810
Non-volatile Analog Resistive Memory Cells Implementing Ferroelectric Select Transistors
- 24 Jan 2022
- US
- 11232824
Semiconductor Device Including Physical Unclonable Function
- 15 Nov 2021
- US
- 11177225
Phase Change Memory With Conductive Bridge Filament
- 11 Oct 2021
- US
- 11145814
Top collaborators
VN
Vijay Narayanan
IBM Fellow & Strategist, Physics of AI. Senior Manager, PCM and AI Materials
MF
Martin Frank
Senior Research Scientist - AI Hardware
BO
Bert Jan Offrein
Manager Neuromorphic Devices and Systems - Principal Research Staff Member