Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
- Nanbo Gong
- Malte Rasch
- et al.
- 2022
- IEDM 2022
Nanbo Gong
Overview
Title
Research Staff Member
Location
IBM Research - Yorktown Heights
Yorktown Heights, NY USA
Publications
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85oC and High Endurance 3D Crosspoint Memory
- Michelle Cheng
- Alexander Grun
- et al.
- 2022
- IEDM 2022
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory
- Huai-Yu Cheng
- Wei-Chih Chien
- et al.
- 2021
- IEDM 2021
Patents
Phase-change Material-based Xor Logic Gates
- 15 May 2023
- US
- 11653578
Nonvolatile Tunable Capacitive Processing Unit
- 08 May 2023
- US
- 11647684
In-memory Resistive Random Access Memory Xor Logic Using Complimentary Switching
- 17 Apr 2023
- US
- 11631809
Temperature Assisted Programming Of Flash Memory For Neuromorphic Computing
- 17 Apr 2023
- US
- 11631462
Pcm Cell With Resistance Drift Correction
- 23 Jan 2023
- US
- 11563173
Multi-level Cell Threshold Voltage Operation Of One-selector-one-resistor Structure Included In A Crossbar Array
- 16 Jan 2023
- US
- 11557342
Low-voltage Flash Memory Integrated With A Vertical Field Effect Transistor
- 26 Sep 2022
- US
- 11456308
Memory Erasure Using Proximity Heaters
- 05 Sep 2022
- US
- 11437102
Multi-level Ferroelectric Field-effect Transistor Devices
- 29 Aug 2022
- US
- 11430510
Semiconductor Logic Circuits Including A Non-volatile Memory Cell
- 02 May 2022
- US
- 11322202
Top collaborators
VN
Vijay Narayanan
IBM Fellow & Strategist, Physics of AI. Senior Manager, PCM and AI Materials
VB
Valeria Bragaglia
Staff Research Scientist, Research Ambassador
MF
Martin M Frank
Senior Research Scientist and Manager, Exploratory Materials and Device Characterization
BO
Bert Jan Offrein
Manager Neuromorphic Devices and Systems - Principal Research Staff Member