Publication
IEDM 2022
Conference paper

New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85oC and High Endurance 3D Crosspoint Memory

Abstract

New phase-change materials from single composite target are systematically studied. It integrated with high Indium doped AsSeGe selector, demonstrates a wide VtS/VtR V_{tS}/V_{tR} memory window, stable 1E7 chips level write cycles (using 400ns box SET) and non-detectable VtS V_{tS} and VtR V_{tR} drift characteristic at 85ºC/1 day in 256kbits ADM memory arrays.