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Publication
IEDM 2022
Conference paper
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85oC and High Endurance 3D Crosspoint Memory
Abstract
New phase-change materials from single composite target are systematically studied. It integrated with high Indium doped AsSeGe selector, demonstrates a wide memory window, stable 1E7 chips level write cycles (using 400ns box SET) and non-detectable and drift characteristic at 85ºC/1 day in 256kbits ADM memory arrays.