EFFECT OF CONTACTS ON ADVANCED BIPOLAR DEVICE CHARACTERISTICS.
- T.H. Ning
- 1983
- VLSI Science and Technology 1983
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POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.
- T.Y. Tan
- U. Goesele
- 1983
- VLSI Science and Technology 1983
DOPANT INCORPORATION PROCESSES IN SILICON GROWN BY MOLECULAR BEAM EPITAXY.
- Subramanian S. Iyer
- Robert A. Metzger
- et al.
- 1983
- VLSI Science and Technology 1983
AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON.
- Subramanian S. Iyer
- C.-Y. Ting
- et al.
- 1983
- VLSI Science and Technology 1983
TEMPERATURE DEPENDENT RESISTIVITY OF THIN FILMS OF NITRIDES OF Zr AND Hf; EFFECT ON NITROGEN CONTENT.
- L. Krusin-Elbaum
- 1983
- VLSI Science and Technology 1983
INTERACTION BETWEEN Ti AND SiO//2.
- C.-Y. Ting
- M. Wittmer
- et al.
- 1983
- VLSI Science and Technology 1983
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- VLSI Science and Technology 1983