TEMPERATURE DEPENDENT RESISTIVITY OF THIN FILMS OF NITRIDES OF Zr AND Hf; EFFECT ON NITROGEN CONTENT.

Abstract

As substantial improvements in both density and performance of VLSI circuits require submicron lithography, the reduced dimensions motivate a search for new low resistivity materials. We have investigated the temperature dependence of electrical resistivity of nitrides of Hf and Zr in the temperature range from 4. 2 to 300K and we find that it is a strong function of nitrogen content. An important property of nitrides is their defect structure; deviations from stoichiometry are common. We have studied nitrides with NMR values ranging from 0. 6 to 1. 4.