Publications

307 results at IEEE Electron Device Letters

Modeling of Currents in a Vertical p-n-p Transistor with Extremely Shallow Emitter
- - Mary Jo Saccamango
  - Tze-Chiang Chen
- 1989
- IEEE Electron Device Letters
A Reduced-Field Design Concept for High-Performance Bipolar Transistors
- - Denny D. Tang
  - Pong-Fei Lu
- 1989
- IEEE Electron Device Letters
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- - David L. Harame
  - Johannes M.C. Stork
  - et al.
- 1989
- IEEE Electron Device Letters
Demonstration of a p-Channel BICFET in the GexSi1-x/Si System
- - R.C. Taft
  - James D. Plummer
  - et al.
- 1989
- IEEE Electron Device Letters
Graded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- - Gary L. Patton
  - David L. Harame
  - et al.
- 1989
- IEEE Electron Device Letters
Spatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride
- - Jerzy Kanicki
  - D. Jousse
- 1989
- IEEE Electron Device Letters
p-Channel FET Based on p/n Double-Quantum-Well Heterostructure
- - Richard A. Kiehl
  - Steven L. Wright
  - et al.
- 1989
- IEEE Electron Device Letters
Recombination Lifetime Profiling in Very Thin Si Epitaxial Layers Used for Bipolar VLSI
- - Paolo Spirito
  - S. Bellone
  - et al.
- 1989
- IEEE Electron Device Letters
Hot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray Lithography
- - C.C.-H. Hsu
  - L.K. Wang
  - et al.
- 1989
- IEEE Electron Device Letters
Sidewall Oxidation of Polycrystalline-Silicon Gate
- - Joseph Piccirillo
  - Arup Bhattacharyya
  - et al.
- 1989
- IEEE Electron Device Letters