D.L. Harame, J.H. Comfort, et al.
IEEE Transactions on Electron Devices
Paper
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
Abstract
Small-geometry silicon-bipolar transistors with -8-k/D base sheet resistances and >100-nm base widths have been fabricated using an ultrahigh vacuum chemical vapor deposition (UHV/CVD) 550 °C epitaxy process. The results show that UHV/CVD low-tempera-ture epitaxy can provide thin highly doped base profiles. This process allows a higher degree of decoupling between base thickness and sheet resistance than is typically obtained with an ion-implanted process. © 1989 IEEE
Related
S. Voldman, P. Juliano, et al.
Annual Proceedings - Reliability Physics (Symposium)
R.A. Kiehl, P.E. Batson, et al.
Physical Review B
M.L. Yu, D.J. Vitkavage, et al.
JVSTA