About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE Electron Device Letters
Paper
Epitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
Abstract
Small-geometry silicon-bipolar transistors with -8-k/D base sheet resistances and >100-nm base widths have been fabricated using an ultrahigh vacuum chemical vapor deposition (UHV/CVD) 550 °C epitaxy process. The results show that UHV/CVD low-tempera-ture epitaxy can provide thin highly doped base profiles. This process allows a higher degree of decoupling between base thickness and sheet resistance than is typically obtained with an ion-implanted process. © 1989 IEEE