J.M.C. Stork, D.L. Harame, et al.
GaAs IC 1994
Small-geometry silicon-bipolar transistors with -8-k/D base sheet resistances and >100-nm base widths have been fabricated using an ultrahigh vacuum chemical vapor deposition (UHV/CVD) 550 °C epitaxy process. The results show that UHV/CVD low-tempera-ture epitaxy can provide thin highly doped base profiles. This process allows a higher degree of decoupling between base thickness and sheet resistance than is typically obtained with an ion-implanted process. © 1989 IEEE
J.M.C. Stork, D.L. Harame, et al.
GaAs IC 1994
R.B. Dunford, R. Newbury, et al.
Solid State Communications
D.L. Harame, J.H. Comfort, et al.
IEEE Transactions on Electron Devices
Gary L. Patton, David L. Harame, et al.
IEEE Electron Device Letters