J.C. Tsang, J. Freeouf, et al.
Physical Review B
The first operational bipolar inversion-channel field-effect transistors (BICFET’s) based on the GexSi1-x/Si system have been successfully demonstrated. The 300 K current gain of β = 365 at a current density of Jc= 2.5 x 104A/cm2 is believed to be the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally scaled-down devices. © 1989 IEEE
J.C. Tsang, J. Freeouf, et al.
Physical Review B
C.-Y. Ting, M. Wittmer, et al.
JES
A.R. Powell, K. Eberl, et al.
Journal of Crystal Growth
T.O. Sedgwick, V.P. Kesan, et al.
IEDM 1991