T.L. Lin, S.C. Chen, et al.
Applied Physics Letters
Paper
Demonstration of a p-Channel BICFET in the GexSi1-x/Si System
Abstract
The first operational bipolar inversion-channel field-effect transistors (BICFET’s) based on the GexSi1-x/Si system have been successfully demonstrated. The 300 K current gain of β = 365 at a current density of Jc= 2.5 x 104A/cm2 is believed to be the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally scaled-down devices. © 1989 IEEE
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