Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- 2015
- IEDM 2015
Publications
This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory
- 2015
- IEDM 2015
Off-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies
- 2015
- IEDM 2015
Large-scale neural networks implemented with non-volatile memory as the synaptic weight element: Comparative performance analysis (accuracy, speed, and power)
- 2015
- IEDM 2015
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- 2015
- IEDM 2015
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
- 2015
- IEDM 2015
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- 2015
- IEDM 2015
STT-MRAM with double magnetic tunnel junctions
- 2015
- IEDM 2015
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- 2015
- IEDM 2015
A tale of two erasure codes in HDFS
- 2015
- FAST 2015