R3: Reinforced Ranker-Reader for Open-Domain Question Answering
- Shuohang Wang
- Mo Yu
- et al.
- 2018
- AAAI 2018
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High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- IEDM 2017
A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
Towards cube-sized compute nodes: Advanced packaging concepts enabling extreme 3D integration
- Thomas Brunschwiler
- Gerd Schlottig
- et al.
- 2017
- IEDM 2017
A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects
- Jie Liang
- Raphael Ramos
- et al.
- 2017
- IEDM 2017
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
- Herwig Hahn
- Veeresh Deshpande
- et al.
- 2017
- IEDM 2017
Integrated dual SPE processes with low contact resistivity for future CMOS technologies
- Heng Wu
- Soon-Cheon Seo
- et al.
- 2017
- IEDM 2017
Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IEDM 2017
Accurate performance evaluation for the horizontal nanosheet standard-cell design space beyond 7nm technology
- Yoo-Mi Lee
- Myung-Hee Na
- et al.
- 2017
- IEDM 2017