Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks
- Gennadi Bersuker
- Chang Seo Park
- et al.
- 2010
- IEEE T-ED
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
11 results for P. Lenahan
Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films
- W.L. Warren
- P. Lenahan
- et al.
- 1991
- Journal of Applied Physics
Energy level of the nitrogen dangling bond in amorphous silicon nitride
- W.L. Warren
- Jerzy Kanicki
- et al.
- 1991
- Applied Physics Letters
Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films
- Jerzy Kanicki
- W.L. Warren
- et al.
- 1991
- Journal of Non-Crystalline Solids
Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films
- Sean E. Curry
- P. Lenahan
- et al.
- 1990
- Applied Physics Letters
The nature of the dominant deep trap in amorphous silicon nitride films: Evidence for a negative correlation energy
- P. Lenahan
- D.T. Krick
- et al.
- 1989
- Applied Surface Science
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
- D.T. Krick
- P. Lenahan
- et al.
- 1988
- Journal of Applied Physics
Neutral E' centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxide
- W.L. Warren
- P. Lenahan
- et al.
- 1988
- Applied Physics Letters
Nature of the dominant deep trap in amorphous silicon nitride
- D.T. Krick
- P. Lenahan
- et al.
- 1988
- Physical Review B
Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride
- D. Jousse
- Jerzy Kanicki
- et al.
- 1988
- Applied Physics Letters