Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks
- Gennadi Bersuker
- Chang Seo Park
- et al.
- 2010
- IEEE T-ED
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11 results for P. Lenahan
Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films
- W.L. Warren
- P. Lenahan
- et al.
- 1991
- Journal of Applied Physics
Energy level of the nitrogen dangling bond in amorphous silicon nitride
- W.L. Warren
- Jerzy Kanicki
- et al.
- 1991
- Applied Physics Letters
Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films
- Jerzy Kanicki
- W.L. Warren
- et al.
- 1991
- Journal of Non-Crystalline Solids
Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films
- Sean E. Curry
- P. Lenahan
- et al.
- 1990
- Applied Physics Letters
The nature of the dominant deep trap in amorphous silicon nitride films: Evidence for a negative correlation energy
- P. Lenahan
- D.T. Krick
- et al.
- 1989
- Applied Surface Science
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
- D.T. Krick
- P. Lenahan
- et al.
- 1988
- Journal of Applied Physics
Neutral E' centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxide
- W.L. Warren
- P. Lenahan
- et al.
- 1988
- Applied Physics Letters
Nature of the dominant deep trap in amorphous silicon nitride
- D.T. Krick
- P. Lenahan
- et al.
- 1988
- Physical Review B
Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride
- D. Jousse
- Jerzy Kanicki
- et al.
- 1988
- Applied Physics Letters