Publication
Applied Physics Letters
Paper

Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

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Abstract

We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.

Date

01 Dec 1990

Publication

Applied Physics Letters

Authors

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