Energy level of the nitrogen dangling bond in amorphous silicon nitride

W.L. Warren; Jerzy Kanicki; J. Robertson; P. Lenahan

doi:10.1063/1.106222

Applied Physics Letters

Paper

01 Dec 1991

Energy level of the nitrogen dangling bond in amorphous silicon nitride

View publication

Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

Paper

Performance of thin hydrogenated amorphous silicon thin-film transistors

Jerzy Kanicki, Frank R. Libsch, et al.

Journal of Applied Physics

Paper

Photoluminescence and electron spin resonance in nitrogen-rich amorphous silicon nitride

D. Chen, J.M. Viner, et al.

Journal of Non-Crystalline Solids

Paper

Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride

Jerzy Kanicki, M. Sankaran, et al.

Applied Physics Letters

Paper

Nature of the dominant deep trap in amorphous silicon nitride

D.T. Krick, P. Lenahan, et al.

Physical Review B

View all publications

Abstract

Related

Performance of thin hydrogenated amorphous silicon thin-film transistors

Photoluminescence and electron spin resonance in nitrogen-rich amorphous silicon nitride

Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride

Nature of the dominant deep trap in amorphous silicon nitride