M. Zelikson, K. Weiser, et al.
Applied Physics Letters
Paper
Energy level of the nitrogen dangling bond in amorphous silicon nitride
Abstract
The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.
Related
D. Jousse, Jerzy Kanicki, et al.
Applied Physics Letters
D.T. Krick, P. Lenahan, et al.
Physical Review B
W.L. Warren, P. Lenahan, et al.
Applied Physics Letters