Publication
Journal of Non-Crystalline Solids
Paper

Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films

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Abstract

The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films. © 1991 Elsevier Science Publishers B.V. All rights reserved.

Date

01 Jan 1991

Publication

Journal of Non-Crystalline Solids

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