Mechanisms of Electromigration Damage in Cu Interconnects
- C. K. Hu
- Lynne Gignac
- et al.
- 2018
- IEDM 2018
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29 results for Christopher M. Breslin
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules
- C. Wang
- S.W. Nam
- et al.
- 2013
- IEDM 2013
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
- Sarunya Bangsaruntip
- K. Balakrishnan
- et al.
- 2013
- IEDM 2013
Sub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2011
- IEDM 2011
Stacking graphene channels in parallel for enhanced performance with the same footprint
- Aaron D. Franklin
- Satoshi Oida
- et al.
- 2013
- IEEE Electron Device Letters
Future on-chip interconnect metallization and electromigration
- C. K. Hu
- James Kelly
- et al.
- 2018
- IRPS 2018
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
- C. K. Hu
- James Kelly
- et al.
- 2017
- IITC 2017
Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2
- Adam Pyzyna
- Hsinyu Tsai
- et al.
- 2017
- IITC 2017
III-V device integration on Si using template-assisted selective epitaxy
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- DRC 2015