Improve variability in carbon nanotube FETs by scaling
- Yanning Sun
- George Tuleski
- et al.
- 2010
- DRC 2010
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178 results for Wilfried Haensch
Interface state density measurements in gated p-i-n silicon nanowires as a function of the nanowire diameter
- Guy Cohen
- E. Cartier
- et al.
- 2010
- DRC 2010
Are Si/SiGe tunneling field-effect transistors a good idea?
- Steven J. Koester
- Isaac Lauer
- et al.
- 2010
- ECS Transactions
Experimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs
- P. Solomon
- S.E. Laux
- et al.
- 2009
- DRC 2009
FDSOI CMOS with dual backgate control for performance and power modulation
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2009
- VLSI-TSA 2009
FinFET resistance mitigation through design and process optimization
- Cindy Wang
- Josephine Chang
- et al.
- 2009
- VLSI-TSA 2009
Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
- N. Tega
- H. Miki
- et al.
- 2009
- VLSI Technology 2009
Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
- R.R. Yu
- F. Liu
- et al.
- 2009
- VLSI Technology 2009
Contact resistivity of NiPtSi on n-doped silicon activated by laser annealing
- Francois Pagette
- Paul M. Solomon
- et al.
- 2008
- MRS Proceedings 2008
SOI series MOSFET for embedded high voltage applications and soft-error immunity
- Jin Cai
- Tak Ning
- et al.
- 2008
- IEEE International SOI Conference 2008