SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
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75 results for Dave Harame
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
New preamorphization technique for very shallow p+-n junctions
- B. Davari
- E. Ganin
- et al.
- 1989
- VLSI Technology 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989
Selective epitaxy base for bipolar transistors
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- ESSDERC 1988
IMPLANTABLE ION-SENSITIVE TRANSISTORS.
- D.L. Harame
- J.D. Shott
- et al.
- 1983
- EMBC 1983
Status and direction of communication technologies - SiGe BiCMOS and RFCMOS
- Alvin J. Joseph
- David L. Harame
- et al.
- 2005
- Proceedings of the IEEE