PaperGated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructuresK. Ismail, M. Arafa, et al.Applied Physics Letters
Conference paperProfile leverage in self-aligned epitaxial Si or SiGe base bipolar technologyJ.H. Comfort, G.L. Patton, et al.IEDM 1990
Conference paperHigh performance Si and SiGe-base pnp transistorsD.L. Harame, J.M.C. Stork, et al.IEDM 1988
PaperA 70-GHz fT low operating bias self-aligned p-type SiGe MODFETM. Arafa, K. Ismail, et al.IEEE Electron Device Letters