Conference paper
63-75 GHz fT SiGe-base heterojunction bipolar technology
G.L. Patton, J.H. Comfort, et al.
VLSI Technology 1990
Paper
IIA-3 113-GHz fT Graded-Base SiGe HBT's
Abstract
No abstract available.
Related
E.F. Crabbé, D.L. Harame, et al.
IEEE T-ED
B.S. Meyerson, E. Ganin, et al.
JES
K. Ismail, M. Arafa, et al.
Applied Physics Letters