IEEE Transactions on Electron Devices

Paper

01 Jan 1993

IIA-3 113-GHz f_T Graded-Base SiGe HBT's

View publication

Abstract

No abstract available.

Paper

Low temperature magnetotransport of 2D electron and hole systems in high-mobility Si-Si_1-xGe_x heterostructures

R.B. Dunford, R. Newbury, et al.

Surface Science

Conference paper

11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonator

M. Soyuer, J.N. Burghartz, et al.

BCTM 1996

Paper

Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors

S. Voldman, P. Juliano, et al.

Annual Proceedings - Reliability Physics (Symposium)

Paper

EXPERIMENTAL AND CHEMICAL KINETIC MODELLING STUDY OF SILICON CVD FROM MONOSILANE AND DISILANE.

B.S. Meyerson, B.A. Scott, et al.

Chemtronics

View all publications