Conference paperSiGe-base heterojunction bipolar transistors: Physics and design issuesG.L. Patton, J.M.C. Stork, et al.IEDM 1990
PaperSubmicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar TransistorsT.C. Chen, E. Ganin, et al.IEEE T-ED
PaperElectrical and physical properties of high-Ge-content Si/SiGe p-type quantum wellsR.A. Kiehl, P.E. Batson, et al.Physical Review B
Conference paper11-GHz 3-V SiGe voltage-controlled oscillator with integrated resonatorM. Soyuer, J.N. Burghartz, et al.BCTM 1996
