Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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39 results for Ali Khakifirooz

First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- - Q. Liu
  - M. Vinet
  - et al.
- 2013
- IEDM 2013
Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology
- - Davood Shahrjerdi
  - Stephen W. Bedell
  - et al.
- 2012
- IEDM 2012
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- - K. Cheng
  - A. Khakifirooz
  - et al.
- 2012
- IEDM 2012
Assessment of fully-depleted planar CMOS for low power complex circuit operation
- - Zhibin Ren
  - S. Mehta
  - et al.
- 2011
- IEDM 2011
Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond
- - Ali Khakifirooz
  - Kangguo Cheng
  - et al.
- 2010
- ISSCC 2010
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
- - K. Cheng
  - A. Khakifirooz
  - et al.
- 2009
- IEDM 2009
MOSFET performance scaling: Limitations and future options
- - Dimitri A. Antoniadis
  - Ali Khakifirooz
- 2008
- IEDM 2008
Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- - Ali Khakifirooz
  - Kangguo Cheng
  - et al.
- 2013
- IEEE Electron Device Letters
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- - Ali Khakifirooz
  - Kangguo Cheng
  - et al.
- 2012
- IEEE Electron Device Letters