A. Khakifirooz, Kangguo Cheng, et al.
VLSI-TSA 2010
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology.
A. Khakifirooz, Kangguo Cheng, et al.
VLSI-TSA 2010
Nicholas A. Lanzillo, Kisik Choi, et al.
IEEE Electron Device Letters
Ali Khakifirooz, Kangguo Cheng, et al.
IEEE Electron Device Letters
Kangguo Cheng, Ali Khakifirooz, et al.
CSTIC 2010