Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
- Ruilong Xie
- Chanro Park
- et al.
- 2019
- VLSI Technology 2019
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25 results for R. R. Robison
Gate-Cut-Last in RMG to Enable Gate Extension Scaling and Parasitic Capacitance Reduction
- A. Greene
- Huimei Zhou
- et al.
- 2019
- VLSI Technology 2019
SiGe FinFET for practical logic libraries by mitigating local layout effect
- G. Tsutsui
- Huimei Zhou
- et al.
- 2017
- VLSI Technology 2017
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
A Simple, unified 3D stress model for device design in stress-enhanced mobility technologies
- Arvind Kumar
- Kai Xiu
- et al.
- 2012
- SISPAD 2012
Leakage engineering enabling PDSOI ring oscillators operating in sub-100pA/μm Ioff regime
- Zhibin Ren
- Jin Cai
- et al.
- 2011
- CSTIC 2011
Design of projected phase-change memory mushroom cells for low-resistance drift
- Timothy M. Philip
- Kevin W. Brew
- et al.
- 2022
- MRS Bulletin
First-Principles Evaluation of fcc Ruthenium for its use in Advanced Interconnects
- Timothy M. Philip
- Nicholas A. Lanzillo
- et al.
- 2020
- Physical Review Applied
Structural and transport properties of Cu/Ta(N)/Cu interfaces in vertical interconnects
- Nicholas A. Lanzillo
- Lawrence Clevenger
- et al.
- 2020
- Journal of Applied Physics