Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Publications
65 results for Pong-Fei Lu
Low-Temperature Avalanche Multiplication In The Collector-Base Junction Of Advanced N-P-N Transistors
- Pong-Fei Lu
- 1990
- IEEE T-ED
The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- Pong-Fei Lu
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
On the Scaling Property of Trench Isolation Capacitance for Advanced High-Performance ECL Circuits
- P.F. Lu
- C.T. Chuang
- 1990
- IEEE T-ED
On the scaling property of trench isolation capacitance for advanced high-performance ECL circuits
- C.T. Chuang
- P.F. Lu
- 1989
- IEDM 1989
Boron-doped emitters for high-performance vertical pnp transistors
- J. Warnock
- P.F. Lu
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Modeling of Currents in a Vertical p-n-p Transistor with Extremely Shallow Emitter
- Mary Jo Saccamango
- Tze-Chiang Chen
- 1989
- IEEE Electron Device Letters
A Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters