A 27 GHz 20 ps PNP technology

Abstract

Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilayer in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.