Pong-Fei Lu
IEEE T-ED
This paper describes the first realization of a reduced-field design concept for advanced bipolar devices using the low-temperature epitaxial (LTE) technique to form the base layer. By inserting a lightly doped collector (LDC) spacer layer between the heavily doped base and collector regions, we have successfully demonstrated that the collector-base (CB) junction avalanche multiplication can be reduced substantially while maintaining high collector doping for current density consideration. Similar applications of the LDS technique to the emitter-base (EB) junction also result in a lower electric field, thus less EB junction reverse leakage. © 1990 IEEE
Pong-Fei Lu
IEEE T-ED
Siegfried K. Wiedmann, Denny D. Tang
ISSCC 1981
Tak H. Ning, Denny D. Tang
IEEE T-ED
G.P. Li, Tze-Chiang Chen, et al.
IEEE Electron Device Letters