Oxidation of silicon-germanium alloys. II. A mathematical modelP.-E. HellbergS.-L. Zhanget al.1997Journal of Applied Physics
Precisions on reaction monitoring from in-situ resistance measurements: Relations between such measurements and actual reaction kineticsS.-L. ZhangF.M. D'Heurle1996Thin Solid Films
On the formation of epitaxial CoSi2 from the reaction of Si with a Co/Ti bilayerS.-L. ZhangJ. Cardenaset al.1995Applied Physics Letters