Investigations of half and full select disturb rates in a toggle magnetic random access memory
- R.P. Robertazzi
- D.C. Worledge
- et al.
- 2008
- Applied Physics Letters
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57 results for Raphael P. Robertazzi
Materials and devices for reduced switching field toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2006
- Journal of Applied Physics
A High-Speed 128-kb MRAM Core for Future Universal Memory Applications
- John DeBrosse
- Dietmar Gogl
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
Memories of tomorrow
- William Reohr
- Heinz Hönigschmid
- et al.
- 2002
- IEEE Circuits and Devices Magazine
Y1ba2cu3o7/mgo/y1ba2cu307 edge josephson junctions
- R.P. Robertazzi
- R.H. Koch
- et al.
- 1993
- IEEE TAS
Investigation of In-Situ Ag/YBCO Contacts for SNS Devices
- R.P. Robertazzi
- A. W Kleinsasser
- et al.
- 1993
- IEEE TAS
Y1Ba2Cu3O7/MgO/Y 1Ba2Cu3O7 edge Josephson junctions
- R.P. Robertazzi
- R.H. Koch
- et al.
- 1992
- Applied Physics Letters
Identifying the source of 1/f noise in SQUIDs made from high-temperature superconductors
- R.H. Koch
- W. Eidelloth
- et al.
- 1992
- Applied Physics Letters
Tunneling in all-high-Tc edge junctions with deposited barriers
- R.B. Laibowitz
- R.P. Robertazzi
- et al.
- 1992
- Physical Review B
In situ Ag/YBa2Cu3O7 contacts for superconductor-normal-metal- superconductor devices
- R.P. Robertazzi
- A.W. Kleinsasser
- et al.
- 1992
- Physical Review B