Abstract
osephson edge junctions have been fabricated using thin sputtered films of MgO (8-32A) to produce a weak connection between high T,. electrodes. The current voltage characteristics of these junctions can be well modeled by the Resistively Shunted Junction (RSJ) equation and they possess excellent Josephson properties, exhibiting strong magnetic field modulation and microwave response at 10 and 100 GHz up to 85K. The best high temperature (T>70 K) operation has been obtained with devices which have critical current densities in excess of 105 A/cm2 at 4.2 K, and junction critical current resistance products ICRa 0.10 mV at 83K. Experiments indicate that improvements in device quality are expected as the base electrode junction surface is improved. Preliminary results indicate that the cyclability of these junctions is good. © 1993 IEEE